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L14G1 - Phototransistor

L14G1 - Phototransistor

L14G1 - Phototransistor

The L14G1 is silicon phototransistors mounted in a narrow angle, TO-18 package

Features:

• Hermetically sealed package

• Narrow reception angle

NOTE:

• Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.

• Derate power dissipation linearly 6.00 mW/°C above 25°C case.

• RMA flux is recommended.

• Methanol or isopropyl alcohols are recommended as cleaning agents.

• Soldering iron tip 1/16” (1.6mm) minimum from housing.

• As long as leads are not under any stress or spring tension.

• Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.

• Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.

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  • Product Code: L14G1 - Phototransistor
  • Availability: Out Of Stock!
  • Rs50.00

Tags: l14g1 - phototransistor, l14g1, photo, transistor, light, opto, sensor

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